PART |
Description |
Maker |
SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC Motorola, Inc
|
TC55VD1636FF-133 |
512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
|
Toshiba Corporation
|
GS8160V36CGT-300 |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
|
TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
CY7C1012DV3307 CY7C1012DV33-8BGXC |
12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock 512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
CY62148-55 CY62148-70 CY62148L-55SC |
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1062AV25-10BGC CY7C1062AV25-10BGI |
512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|